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R474
CH-FIC047
N-Channel 30-V (D-S) MOSFET SiR474DPVDS=30VID=20A @ VDS=10VID=20A @ VDS=4.5V
2.98 €
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9620s
CH-FIC042
FDMS9620S Dual N-Channel PowerTrench® MOSFET Q1: 30V, 16A, 21.5mΩ Q2: 30V, 18A, 13mΩ FDMS9620POWER 56 PackQ1 Switch: N-ChannelVDS=30VID=7.5A @ VGS=10VID=6.5A @ VGS=4.5VQ2 Switch: N-ChannelVDS=30VID=10A @ VGS=10VID=8.5A @ VGS=4.5VThis device includes two specialized MOSFETs in a unique dual Power...
2.98 €
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4141
CH-FIC039
FDS4141P-Channel PowerTrench® MOSFET-40V, -10.8A, 13.0mΩVDS=-40VID=-10.5A @ VGS=-10VID=-8.4A @ VGS=-4.5VThis P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance...
2.98 €
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2659
CH-FIC040
MDS2659 N-Channel MOSFET SOP8VDS=30VID=15A @ VGS=10V
2.98 €
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4924
CH-FIC038
AO4924Asymmetric Dual N-Channel MOSFETFET1VDS=30VID=9A @ VGS=10VFET2VDS=30VID=7.3A @ VGS=10VThe AO4924 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC...
2.98 €
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4704
CH-FIC035
AO4704N-Channel Enhancement Mode Field Effect Transistor withSchottky DiodeVDS=30VID=13A @ VGS=10VThe AO4704 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is suitable for use as a synchronous switch in PWM...
2.98 €
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4842
CH-FIC037
AO484230V Dual N-Channel MOSFETVDS=30VID=7.7A @ VGS=10VThe AO4842 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters.
2.98 €
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8878
CH-FIC034
FDS8878N-Channel PowerTrench® MOSFETVDS=30VID=10.2A @ VGS=10VID=9.3A @ VGS=4.5VThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge,...
2.98 €
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7832
CH-FIC032
F7832IRF7832 N-ChannelHEXFET Power MOSFETVDS=30VID=20A
2.98 €
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8736
CH-FIC033
IRF8736 F8736IRF8736PbFHEXFET Power MOSFETVDS=30VID=18A @ VGS=10V
2.98 €
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6676as
CH-FIC030
FDS6676AS 6676AS30V N-Channel PowerTrench® SyncFET™VDS=30VID=14.5A @ VGS=10VThe FDS6676AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate...
2.98 €
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4807
CH-FIC031
AO4807 30V Dual P-Channel MOSFETVDS=-30VID=-6A @ VGS=10VThe AO4807 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications.
2.98 €
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4810
CH-FIC029
4810 SI4810 4810DN-Channel 30-V (D-S) MOSFET with Schottky DiodeMOSFET Product SummaryVDS=30VID=10A @ VGS=10VID=8A @ VGS=4.5VShottky Product SummaryVDS=30VIF=4A
2.98 €
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4422
CH-FIC027
AO4422N-Channel Enhancement Mode Field Effect TransistorVDS=30VID=11A @ VGS=10VThe AO4422 uses advanced trench technology toprovide excellent RDS(ON) and low gate charge. Thisdevice is suitable for use as a load switch or in PWMapplications. The source leads are separated to allowa Kelvin...
2.98 €
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4456
CH-FIC028
AO445630V N-Channel MOSFET SRFETVDS=30VID=20A @ VGS=10VSRFETTM AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose...
2.98 €
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4466
CH-FIC026
AO4466 30V N-Channel MOSFETVDS=30VID=10A@ VGS=10VThe AO4466 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which...
2.98 €
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8880
CH-FIC023
N-Channel PowerTrench® MOSFET FDS8880VDS=30VID=11.6A @ VGS=10VID=10.7A @ VGS=4.5VThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate...
2.98 €
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6690
CH-FIC024
FDS6690AS 6690AS30V N-Channel PowerTrench® SyncFET™VDS=30VID=10A @ VGS=10VThe FDS6690AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate...
2.98 €
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6900
CH-FIC021
Dual N-Ch PowerTrench® SyncFET™ 6900ASMOSFET1 (Switch Q1): Optimized for low switching losses Low Gate Charge (11nC typical)VDS=30VID=6.9A @ VGS=10VMOSFET2 (Switch Q2): Optimized to minimize conduction losses icludes SyncFET Schottky body diodeVDS=30VID=8.2A @ VGS=10VThe FDS6900AS is designed to...
2.98 €
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7904
CH-FIC022
IRF7904PbF HEXFET Power MOSFETMOSFET1 (Switch Q1): Optimized for low switching losses Low Gate Charge (11nC typical)VDS=30VID=7.6A @ VGS=10VMOSFET2 (Switch Q2): Optimized to minimize conduction losses icludes SyncFET Schottky body diodeVDS=30VID=11A @ VGS=10V
2.98 €
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Παράδοση 1 Εώς 3 Ημέρες
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