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CH-FL043
LED 40 PIN DD0U33LC0106017B0416701 HP 14-C 
17.86 
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CH-FL041
LED 40 PIN6017B0416401HP Envy TouchSmart 15 15-J15-J 15-J000 15-J084nr
17.86 
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CH-FL040
LED 40 PIN  2000-2b19WM 2000-2b20CA 255 G1   250 G1  HP 2000-2d24DX 6017B0373701    
17.86 
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CH-FL039
LED 40 PIN DD0R36LC000 
17.86 
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CH-FIC077
FDMS7692 N-Channel PowerTrench® MOSFET30 V, 7.5 mΩVDS = 30V„ID = 13A, Max rDS(on) = 7.5mΩ at VGS = 10VID = 10A, Max rDS(on) = 13mΩ at VGS = 4.5V Advanced Package and Silicon combination for low rDS(on) and high efficiencyThis N-Channel MOSFET has been designed specifically to improve the overall...
2.98 
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CH-FL038
CCFL 30 PINVPCF1 015-0001-1497_A101004 REV:APCG 81115L VPC F M930VPC-F
17.86 
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CH-FIC073
Si7686DPN-Channel 30-V (D-S) MOSFETVDS = 30VID = 35A @ VGS = 10V, RDS(on) = 9.5mΩID = 35A @ VGS = 4.5V, RDS(on) = 14mΩ
2.98 
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389
CH-FIC068
RJK0389DPA, K0389Silicon Dual N Channel Power MOS FET with Schottky Barrier DiodeHigh Speed Power SwitchingMOSFET1VDS = 30VID = 15A @ VGS = 10VMOSFET2VDS = 30VID = 20A @ VGS = 10V
2.98 
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CH-FIC072
Si7636DPN-Channel 30-V (D-S) MOSFETVDS = 30VID = 28A @ VGS = 10V, RDS(on) = 4mΩID = 28A @ VGS = 4.5V, RDS(on) = 4.8mΩ
2.98 
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CH-FIC066
FDS6679AZP-Channel PowerTrench® MOSFET -30V, -13A, 9mΩVDS = -30VID = -13A @ VGS = -10V, RDS(on) = 9.3mΩID = -11A @ VGS = -4.5V, RDS(on) = 14.8mΩThis P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the...
2.98 
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CH-FIC062
AP85T03GH/J N-CHANNEL ENHANCEMENT MODE POWER MOSFET TO-252 PackageVDS = 30VID = 75A @ VGS = 10V, RDS(on) = 6mΩThe TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version...
2.98 
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CH-FIC064
Si4459ADYP-Channel 30-V (D-S) MOSFETVDS = -30VID = -29A @ VGS = -10V, RDS(on) < 5mΩID = -23A @ VGS = -4.5V, RDS(on) < 7.75mΩ
2.98 
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CH-FIC061
AP85U03GHN-Channel Enhancement Mode Power MOSFET. Package : TO-252(H) Type30V, 75AVDS=30VID=75A @ VGS=10V
2.98 
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CH-FIC060
Si4914BDYDual N-Channel 30-V (D-S) MOSFET with Schottky DiodeChannel-1VDS = 30VID = 8.4A @ VGS = 10V, RDS(on) = 21mΩID = 7.4A @ VGS = 4.5V, RDS(on) = 27mΩChannel-2VDS = 30VID = 8A @ VGS = 10V, RDS(on) = 20mΩID = 8A @ VGS = 4.5V, RDS(on) = 25mΩShottky Product SummaryVDS = 30VIF = 2AVSD = 0.5V @ 1A
2.98 
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CH-FIC059
AF4825PP-Channel 30-V (D-S) MOSFETVDS = -30VID = -11.5A @ VGS = 10V, RDS(on) = 13mΩID = 9.3A @ VGS = 4.5V, RDS(on) = 19mΩThese miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power...
2.98 
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CH-FIC058
IRF7836PbF N-Channel HEXFET Power MOSFET F7836VDS = 30VID = 17A @ VGS = 10V, RDS(on) = 5.7mΩ
2.98 
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CH-FIC057
4232BGM, AP4232BGM-HF DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFETVDS = 30VID = 7.6A @ VGS = 10V, RDS(on) = 22mΩAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
2.98 
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CH-FIC055
FDS6675BZ P-Channel PowerTrench® MOSFET -30V, -11A, 13mΩVDS = -30VID = -11A @ VGS = -10V, RDS(on) = 13mΩID = -9A @ VGS = -4.5V, RDS(on) = 21.8mΩThis P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the...
2.98 
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CH-FIC051
4N60 Power MOSFET4A, 600V N-CHANNEL POWER MOSFETVDS = 600VID = 2.2A @ VGS = 10V, RDS(on) < 2.5ΩThe UTC 4N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche...
2.98 
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CH-FIC053
AO4430 30V N-Channel MOSFETVDS=30VID=18A @ VGS=10V, RDS(on)
2.98 
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